• Title of article

    Finite element modeling of dislocation reduction in GaAs and InP single crystals grown from the VGF process

  • Author/Authors

    X.A. Zhu، نويسنده , , Gary Sheu، نويسنده , , C.T. Tsai، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    12
  • From page
    81
  • To page
    92
  • Keywords
    VGF growth process , GaAs and InP crystals , Doping impurity , Dislocation density
  • Journal title
    FINITE ELEMENTS IN ANALYSIS & DESIGN
  • Serial Year
    2006
  • Journal title
    FINITE ELEMENTS IN ANALYSIS & DESIGN
  • Record number

    351707

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=351707