مرکز منطقه ای اطلاع رساني علوم و فناوري - Finite element modeling of dislocation reduction in GaAs and InP single crystals grown from the VGF process

Title of article :

Finite element modeling of dislocation reduction in GaAs and InP single crystals grown from the VGF process

Author/Authors :

X.A. Zhu، نويسنده , , Gary Sheu، نويسنده , , C.T. Tsai، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2006

Pages :

From page :

To page :

Keywords :

VGF growth process , GaAs and InP crystals , Doping impurity , Dislocation density

Journal title :

FINITE ELEMENTS IN ANALYSIS & DESIGN

Serial Year :

2006

Journal title :

FINITE ELEMENTS IN ANALYSIS & DESIGN

Record number :

351707

Link To Document :