مرکز منطقه ای اطلاع رساني علوم و فناوري - Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy

Title of article :

Inhomogeneous sources of misfit dislocation generation in In xGa1− xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy

Author/Authors :

J. Zou، نويسنده , , D.J.H. Cockayne، نويسنده , , J.J. Russell-Harriott ، نويسنده , , A.R. Moon، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 1997

Pages :

From page :

309

To page :

312

Keywords :

misfit dislocation generation , inhomogeneous source , strained-layer heterostructures , Molecular beam epitaxy

Journal title :

Micron

Serial Year :

1997

Journal title :

Micron

Record number :

356695

Link To Document :