مرکز منطقه ای اطلاع رساني علوم و فناوري - The Influence of Strain Relaxation on the Electrical Properties of Submicron Si/SiGe Resonant-Tunneling Diodes

Title of article :

The Influence of Strain Relaxation on the Electrical Properties of Submicron Si/SiGe Resonant-Tunneling Diodes

Author/Authors :

P. W. Lukey، نويسنده , , J. Caro، نويسنده , , T. Zijlstra، نويسنده , , E. van der Drift and S. Radelaar ، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2000

Pages :

From page :

To page :

Keywords :

sIgE , strain relaxation , resonant tunneling

Journal title :

Analog Integrated Circuits and Signal Processing

Serial Year :

2000

Journal title :

Analog Integrated Circuits and Signal Processing

Record number :

367057

Link To Document :