Title of article
Experimental 128-kbit ferroelectric memory with 1012 endurance and 10-year data retention
Author/Authors
Chung، نويسنده , , Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
136
To page
142
Journal title
I E T Circuits, Devices and Systems
Serial Year
2002
Journal title
I E T Circuits, Devices and Systems
Record number
371471
Link To Document