مرکز منطقه ای اطلاع رساني علوم و فناوري - Investigation of the SiO2/Si(111) interface by means of angle-scanned photoelectron diffraction

Title of article :

Investigation of the SiO2/Si(111) interface by means of angle-scanned photoelectron diffraction

Author/Authors :

S. Dreiner، نويسنده , , M. Schürmann، نويسنده , , C. Westphal and H. Zacharias، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2001

Pages :

From page :

431

To page :

436

Keywords :

Chemical shift , Silicon oxide , Interface , Photoelectron diffraction

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2001

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

379523

Link To Document :