مرکز منطقه ای اطلاع رساني علوم و فناوري - Investigation of the SiO2/Si(1 0 0) interface structure by means of angle-scanned photoelectron spectroscopy and diffraction

Title of article :

Investigation of the SiO2/Si(1 0 0) interface structure by means of angle-scanned photoelectron spectroscopy and diffraction

Author/Authors :

S. Dreiner، نويسنده , , M. Schürmann and C. Westphal، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2004

Pages :

From page :

To page :

Keywords :

Angle-scanned photoelectron spectroscopy , Chemical shift , Silicon oxide , Photoelectron diffraction

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2004

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

380012

Link To Document :