مرکز منطقه ای اطلاع رساني علوم و فناوري - Electronic structure of the interface of GaAs(1 0 0) with MgO overlayer grown by thermal evaporation of Mg in O2 under UHV

Title of article :

Electronic structure of the interface of GaAs(1 0 0) with MgO overlayer grown by thermal evaporation of Mg in O2 under UHV

Author/Authors :

Faqiang Xu، نويسنده , , Haibin Pan، نويسنده , , Wenhua Zhang، نويسنده , , Guodong Wang and Pengshou Xu، نويسنده , , Zongmu Li and Pengshou Xu، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2005

Pages :

From page :

385

To page :

388

Keywords :

Photoemission , MgO , GaAs(1 0 0) , Surface and interface

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2005

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

380316

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=380316