مرکز منطقه ای اطلاع رساني علوم و فناوري - Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

Title of article :

Silicon carbide surface oxidation and SiO2/SiC interface formation investigated by soft X-ray synchrotron radiation

Author/Authors :

P. Soukiassian and F. Amy، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2005

Pages :

From page :

783

To page :

788

Keywords :

synchrotron radiation , Oxidation and oxides , Core level photoemission spectroscopy , polytype , silicon carbide , Surfaces and interfaces

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2005

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

380407

Link To Document :