مرکز منطقه ای اطلاع رساني علوم و فناوري - X-ray absorption and emission spectroscopy at the Hf L1 edge of hafnium-(silicon)-oxide ultra-thin films

Title of article :

X-ray absorption and emission spectroscopy at the Hf L1 edge of hafnium-(silicon)-oxide ultra-thin films

Author/Authors :

Yasushi Uehara، نويسنده , , Kazumasa Kawase، نويسنده , , Jun’ichi Tsuchimoto and Teruo Shibano، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2005

Pages :

From page :

To page :

Keywords :

X-ray fluorescence , XANES , Hafnium silicate , hafnium oxide , High-k gate dielectric layer

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2005

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

380519

Link To Document :