Title of article
Original cabling conditions to insure balanced current during switching transitions between paralleled semiconductors
Author/Authors
Jeannin، نويسنده , , P.-O.، نويسنده , , Schanen، نويسنده , , J.-L.، نويسنده , , M. CLAVEL، نويسنده , , E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
8
From page
181
To page
188
Keywords
insulated gate bipolar transistor , MOS device , paralleling , simulation. , power semiconductor devices
Journal title
IEEE Transactions on Industry Applications
Serial Year
2002
Journal title
IEEE Transactions on Industry Applications
Record number
381366
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