Title of article :
MOSFET modeling for circuit simulation
Author/Authors :
Daniel Foty ، نويسنده , , D.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
6
From page :
26
To page :
31
Abstract :
An overview of MOSFET modeling for circuit simulation is presented. After discussing some of the implications of analog and low-power applications, the history of the MOS models commonly used in SPICE-like circuit simulators is presented, followed by a discussion of the evolution of strategies for modeling the geometry dependence of MOSFET characteristics. The growth of complexity and requirements for future MOS models are also considered
Journal title :
IEEE Circuits and Devices Magazine
Serial Year :
1998
Journal title :
IEEE Circuits and Devices Magazine
Record number :
397320
Link To Document :
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