Title of article :
SOI: a metamorphosis of silicon
Author/Authors :
Cristoloveanu، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
7
From page :
26
To page :
32
Abstract :
For the next millennium, SOI offers the opportunity to integrate high-performance and/or innovative devices that can push away the present frontiers of the CMOS down-scaling. SOI will play a significant role in the future of microelectronics if subsisting problems can be rapidly solved. The short-term prospects of SOI-based microelectronics will also closely depend on the penetration rate of LP/LV SOI circuits into the market, A key challenge is associated with the industrial strategy, which must be oriented to overcome the bulk-Si monocultural barrier. Designers, process engineers, and managers are extremely busy loading the bulk-Si machine. When, eventually, they can afford to take a careful look at the assets of SOI technology, they do realize the immediate and long-term benefits offered in terms of performance and scaling extensions. Several companies have already accomplished this step; others will follow soon. SOI should not be regarded as a totally different technology. It is just a metamorphosis of silicon
Journal title :
IEEE Circuits and Devices Magazine
Serial Year :
1999
Journal title :
IEEE Circuits and Devices Magazine
Record number :
397347
Link To Document :
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