Title of article :
Riding the crest of a new wave in memory [NOVORAM]
Author/Authors :
Likharev، نويسنده , , K.K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
NOVORAM is a convenient new paradigm that may enable the Moore-law-type progress of semiconductor memory technology to be extended well into the nanoscale, terabit range. However, it still faces the challenges of CMOS-compatible deposition of high-quality, few-nanometer layers of wide-bandgap semiconductors
Journal title :
IEEE Circuits and Devices Magazine
Journal title :
IEEE Circuits and Devices Magazine