Title of article
Attractive magnetic memories
Author/Authors
Katti، نويسنده , , R.R.، نويسنده , , Zhu، نويسنده , , T.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
9
From page
26
To page
34
Abstract
Giant magneto-resistive random-access memories (GMRAMs) are magnetic nonvolatile random-access memories that use magnetic storage in magnetic multilayers to store data and the giant magneto-resistance (GMR) effect to read stored data. Pseudo-spin-valve (PSV) and spin-valve (SV) devices are patterned magnetic multilayers that exhibit the GMR effect in current-in-plane (CIP) structures. This article will focus on the operating principles of PSV and SV devices as CIP GMRAM elements
Journal title
IEEE Circuits and Devices Magazine
Serial Year
2001
Journal title
IEEE Circuits and Devices Magazine
Record number
397406
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