Title of article :
Attractive magnetic memories
Author/Authors :
Katti، نويسنده , , R.R.، نويسنده , , Zhu، نويسنده , , T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
9
From page :
26
To page :
34
Abstract :
Giant magneto-resistive random-access memories (GMRAMs) are magnetic nonvolatile random-access memories that use magnetic storage in magnetic multilayers to store data and the giant magneto-resistance (GMR) effect to read stored data. Pseudo-spin-valve (PSV) and spin-valve (SV) devices are patterned magnetic multilayers that exhibit the GMR effect in current-in-plane (CIP) structures. This article will focus on the operating principles of PSV and SV devices as CIP GMRAM elements
Journal title :
IEEE Circuits and Devices Magazine
Serial Year :
2001
Journal title :
IEEE Circuits and Devices Magazine
Record number :
397406
Link To Document :
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