Author/Authors :
Hess، نويسنده , , K.، نويسنده , , Wafaa M. Haggag، نويسنده , , A.، نويسنده , , McMahon، نويسنده , , W.، نويسنده , , Cheng، نويسنده , , K.، نويسنده , , Lee، نويسنده , , J.، نويسنده , , Lyding، نويسنده , , J.، نويسنده ,
Abstract :
We have indicated the necessity for using statistical models to determine the reliability of deep-submicron MOSFETs. We have presented a methodology by which the reliability can be determined from short-time tests if the defect generation statistics are linked to variations in defect activation energies. We have shown that enhanced latent failures follow from our model for deep-submicron MOSFETs. Therefore, more stringent reliability standards are required, which can be validated by the use of short-time tests. Our model provides the means to calculate these novel reliability demands quantitatively
