Explaining strain [in silicon]

Large effects of elastic strain on the electrical resistance of silicon were discovered not long after the recognition of silicon as the material for the development of solid-state electronics. The effects were shortly employed as the basis of a variety of mechanical sensors. More recently, the use of strain to improve the performance of field-effect transistors (FETs) has drawn increased attention to its role as a part of the arsenal of silicon electronic technology. Attention to unwanted strain as a source of problems is also increasing. This article is aimed at explaining the basis of the effects of strain on the electrical properties of n-silicon and how these effects produce both good and bad results.