Title of article
Spice up your MOSFET modelling
Author/Authors
Tian Yu Cao، نويسنده , , Orshansky، نويسنده , , M.، نويسنده , , Sato، نويسنده , , T.، نويسنده , , Sylvester، نويسنده , , D.، نويسنده , , Chenming Hu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
7
From page
17
To page
23
Abstract
A customizable and predictive BSIM model has been generated for devices with Leff down to 12 nm and a wide range of interconnect sizes. Extensive evaluations demonstrate the validity of this approach. The main advantages of this approach over previous work are its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that are not yet available.
Journal title
IEEE Circuits and Devices Magazine
Serial Year
2003
Journal title
IEEE Circuits and Devices Magazine
Record number
397556
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