Title of article :
Spice up your MOSFET modelling
Author/Authors :
Tian Yu Cao، نويسنده , , Orshansky، نويسنده , , M.، نويسنده , , Sato، نويسنده , , T.، نويسنده , , Sylvester، نويسنده , , D.، نويسنده , , Chenming Hu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
7
From page :
17
To page :
23
Abstract :
A customizable and predictive BSIM model has been generated for devices with Leff down to 12 nm and a wide range of interconnect sizes. Extensive evaluations demonstrate the validity of this approach. The main advantages of this approach over previous work are its applicability to generic technologies as well as the ease of use provided by a Web-based distribution model. These predictive technology models will be useful for circuit design research aimed at processes that are not yet available.
Journal title :
IEEE Circuits and Devices Magazine
Serial Year :
2003
Journal title :
IEEE Circuits and Devices Magazine
Record number :
397556
Link To Document :
بازگشت