Title of article
BJT-BJT, FET-BJT, and FET-FET
Author/Authors
Mohammadi Roozbahani، M. نويسنده , , R.G. ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
6
From page
17
To page
22
Abstract
Cascode amplifiers have three configurations: bipolar junction transistor-bipolar junction transistor (BJT-BJT), field-effect transistor (FET)-BJT, and FET-FET. Although the high-frequency behaviors of these configurations are not the same in practice, in most textbooks only the BJT-BJT configuration is analyzed. High-frequency response of the BJT-BJT cascode amplifier is limited by three factors: 1) the source impedance or the output impedance of the previous stage; 2) the output impedance or the load of the amplifier; and 3) the dc bias current of the amplifier. In order to cope with these limitations, this article presents a modified cascode amplifier. In this new configuration, only a single transistor is added to the elements of each of the aforementioned cascode amplifiers. Corresponding to each configuration, a modified configuration results in greater or approximately equal gain and higher bandwidth.
Journal title
IEEE Circuits and Devices Magazine
Serial Year
2004
Journal title
IEEE Circuits and Devices Magazine
Record number
397627
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