Title of article
BJT-FET comparison: a new FET model
Author/Authors
Hassul، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
3
From page
92
To page
94
Abstract
A new ae model for the field effect transistor (FET) is
presented. This model allows direct comparison between bipolar junction
transistor (BJT) and FET amplifier circuits.
Journal title
IEEE TRANSACTIONS ON EDUCATION
Serial Year
1996
Journal title
IEEE TRANSACTIONS ON EDUCATION
Record number
397700
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