Title of article :
BJT-FET comparison: a new FET model
Author/Authors :
Hassul، نويسنده , , M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Abstract :
A new ae model for the field effect transistor (FET) is
presented. This model allows direct comparison between bipolar junction
transistor (BJT) and FET amplifier circuits.
Journal title :
IEEE TRANSACTIONS ON EDUCATION
Journal title :
IEEE TRANSACTIONS ON EDUCATION
