Title of article :
The Average Capacitor Current Method for Delay Calculation in MOS Circuits
Author/Authors :
A. I. Kayssi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
The transient response of metal–oxide–semiconductor
(MOS) gates is a topic covered in most textbooks on digital
integrated circuits and very-large-scale-integration (VLSI) design.
One method often used to calculate first-order estimates of gate
delays is the average capacitor current method. Using this method,
the delay is calculated assuming that the capacitor current is constant
and equal to the average of the capacitor current values at
the limits of the time interval of interest. In this paper, this method
is discussed and compared with other methods of delay calculation
using integration and curve-fitting techniques familiar to electrical
and computer engineering students. Since the computation of the
capacitor current is relatively complicated because it requires the
calculation of the MOS transistor currents, for propagation delay
calculation there is no benefit in calculating the capacitor current
twice. A single current calculation, corresponding to the familiar
midpoint integration method, is sufficient to get the same or better
accuracy as that of the average capacitor current method. The
two-point Gauss quadrature formula is shown to provide excellent
results with two capacitor current evaluations.
Keywords :
metal–oxide–semiconductor field-effect transistor(MOSFET) circuits , very-large-scale integration (VLSI). , Delay effects , digital integrated circuits , Electronics
Journal title :
IEEE TRANSACTIONS ON EDUCATION
Journal title :
IEEE TRANSACTIONS ON EDUCATION