Title of article :
A New Derivation of the Law of the Junctions
Author/Authors :
S. M. Joshi and H. R. Pota، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
3
From page :
497
To page :
499
Abstract :
In this paper, the author presents students with a new and simple derivation of the law of the junctions. The law of the junctions is crucial to the correct understanding of the operation of the bipolar junction transistor. The integral of the product of the density of energy states and Fermi–Dirac distribution function is used to derive the density of free electrons and holes crossing from one side to another at a pn-junction under an external applied voltage.
Keywords :
Bipolar junction transistor (BJT) , diode current , electrons crossing over , pn-junction built-in potential , the law ofthe junctions.
Journal title :
IEEE TRANSACTIONS ON EDUCATION
Serial Year :
2004
Journal title :
IEEE TRANSACTIONS ON EDUCATION
Record number :
398188
Link To Document :
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