• Title of article

    Device modeling and simulations toward sub-10 nm semiconductor devices

  • Author/Authors

    Sano، نويسنده , , N.، نويسنده , , Hiroki، نويسنده , , A.، نويسنده , , Matsuzawa، نويسنده , , K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    9
  • From page
    63
  • To page
    71
  • Keywords
    Device simulation , drift-diffusion , Many-body effects , Quantum effects , quantum potential , sub-10 nm metal–oxide–semiconductorfield-effect-transistors (MOSFETs). , long-rangeCoulomb potential , Monte Carlo
  • Journal title
    IEEE Transactions on Nanotechnology
  • Serial Year
    2002
  • Journal title
    IEEE Transactions on Nanotechnology
  • Record number

    398293

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=398293