Title of article :
Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential
Author/Authors :
Yiming Li، نويسنده , , Ting-wei Tang، نويسنده , , Xinlin Wang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
5
From page :
238
To page :
242
Keywords :
modeling and simulation , quantum effect , MOS devices , Schr?dinger–Poisson. , Effective potential
Journal title :
IEEE Transactions on Nanotechnology
Serial Year :
2002
Journal title :
IEEE Transactions on Nanotechnology
Record number :
398315
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=398315
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