Title of article :
Noise-tolerant quantum MOS circuits using resonant tunneling devices
Author/Authors :
Li Ding، نويسنده , , Mazumder، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
13
From page :
134
To page :
146
Keywords :
integrated circuit noise , resonant tunneling devices. , negative differential resistance , Noise tolerance , domino logic circuits , CMOS integrated circuits
Journal title :
IEEE Transactions on Nanotechnology
Serial Year :
2004
Journal title :
IEEE Transactions on Nanotechnology
Record number :
398399
Link To Document :
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