Title of article
Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter
Author/Authors
Brown، نويسنده , , A.R.، نويسنده , , Asenov، نويسنده , , A.، نويسنده , , Watling، نويسنده , , J.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
195
To page
200
Keywords
Charge carrier processes , lithography , MOSFETs , semiconductor device doping , semiconductor devicemodeling , Stochastic processes.
Journal title
IEEE Transactions on Nanotechnology
Serial Year
2002
Journal title
IEEE Transactions on Nanotechnology
Record number
398549
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