Title of article :
Effects of oxidation process on the tunneling barrier structures in room-temperature operating silicon single-electron transistors
Author/Authors :
Saitoh، نويسنده , , M.، نويسنده , , Murakami، نويسنده , , T.، نويسنده , , Hiramoto، نويسنده , , T.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
5
From page :
214
To page :
218
Keywords :
Room-temperature operation , silicon single-electrontransistor (SET) , thermal oxidation , thermally activated conduction , tunneling barrier height.
Journal title :
IEEE Transactions on Nanotechnology
Serial Year :
2002
Journal title :
IEEE Transactions on Nanotechnology
Record number :
398552
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=398552
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