مرکز منطقه ای اطلاع رساني علوم و فناوري - A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition

Title of article :

A SPICE-compatible model for nanoscale MOSFET capacitor simulation under the inversion condition

Author/Authors :

Ting-wei Tang، نويسنده , , Yiming Li، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2002

Pages :

From page :

243

To page :

246

Keywords :

compact charge model , deviceand circuit simulation , C–V curve , MOSFETs , quantum correction , Schr?dinger–Poisson.

Journal title :

IEEE Transactions on Nanotechnology

Serial Year :

2002

Journal title :

IEEE Transactions on Nanotechnology

Record number :

398557

Link To Document :