مرکز منطقه ای اطلاع رساني علوم و فناوري - Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

Title of article :

Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

Author/Authors :

Banerjee، نويسنده , , S.، نويسنده , , Shaoyun Huang، نويسنده , , Oda، نويسنده , , S.، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2003

Pages :

From page :

To page :

Keywords :

Memory , MOSFETs , nanotechnology.

Journal title :

IEEE Transactions on Nanotechnology

Serial Year :

2003

Journal title :

IEEE Transactions on Nanotechnology

Record number :

398574

Link To Document :