Investigation of electrical characteristics on surrounding-gate and omega-shaped-gate nanowire FinFETs

Yiming Li، نويسنده , , Hung-Mu Chou، نويسنده , , Jam-Wem Lee، نويسنده ,

روزنامه با شماره پیاپی سال 2005

7

510

516

surrounding gate , turn-on resistance. , Coverage ratio , Fabrication , device structure , Nanowire , gate capacitance , on/off ratio , quantum correction model , process technique , subthresholdswing (SS) , fin field-effect transistor (FinFET) , Semiconductor devices , omega-shaped-gate , nanodevice , three-dimensional (3-D) simulation

IEEE Transactions on Nanotechnology

2005

IEEE Transactions on Nanotechnology

398762