Title of article :
COSMOS-a novel MOS device paradigm
Author/Authors :
Kaya، نويسنده , , S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
588
To page :
593
Keywords :
silicon–germanium alloys , CMOSintegrated circuits (ICs) , silicon-on-insulator(SOI) technology , leakage currents , ultra-large-scaleintegration. , CMOS field-effect transistors (FETs)
Journal title :
IEEE Transactions on Nanotechnology
Serial Year :
2005
Journal title :
IEEE Transactions on Nanotechnology
Record number :
398774
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=398774
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