Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era

Jam-Wem Lee، نويسنده , , Yiming Li، نويسنده ,

روزنامه با شماره پیاپی سال 2006

5

211

215

fully silicided , Semiconductor devices , ULSI. , Simulation , circuit design , design , silicide-blocked , electrostatic discharge(ESD) , Fabrication , floating charge effect , Measurement , nanodevice

IEEE Transactions on Nanotechnology

2006

IEEE Transactions on Nanotechnology

398828