• Title of article

    Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era

  • Author/Authors

    Jam-Wem Lee، نويسنده , , Yiming Li، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    5
  • From page
    211
  • To page
    215
  • Keywords
    fully silicided , Semiconductor devices , ULSI. , Simulation , circuit design , design , silicide-blocked , electrostatic discharge(ESD) , Fabrication , floating charge effect , Measurement , nanodevice
  • Journal title
    IEEE Transactions on Nanotechnology
  • Serial Year
    2006
  • Journal title
    IEEE Transactions on Nanotechnology
  • Record number

    398828

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=398828