Investigation of a simple and efficient method for silicon neutron transmutation doping process in Tehran research reactor

Neutron transmutation doping of silicon (NTD) is one of the important applications in industrial utilization of research reactors. In this paper, the proposed irradiation system based on using a reflecting environment around the irradiation channel of the NTD facility was designed and simulated for irradiation of silicon in the Tehran research reactor (TRR) by using codes such as MCNP, WIMS and CITATION. This system is very simple and does not require conventional methods, such as continuous movement and use of absorbing materials and windows, for flattening of neutron flux in the radial and longitudinal direction. The influence of type and dimensions of reflectors on the irradiated silicon crystal was investigated and also the optimum conditions were determined for TRR for silicon ingots with diameter up to 5 cm and up to 10 cm.