Title of article :
IDDQ Testing for Deep-Submicron ICs: Challenges and Solutions
Author/Authors :
Zhanping Chen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
The use of low-threshold devices in scaled low-voltage CMOS circuits leads to increased intrinsic leakage current. As a result, I DDQ testing requires different techniques to remain effective
Journal title :
IEEE Design and Test of Computers
Journal title :
IEEE Design and Test of Computers