• Title of article

    Device Model for Ballistic CNFETs Using the First Conducting Band

  • Author/Authors

    Hamidreza Hashempour، نويسنده , , NXP Semiconductors Fabrizio Lombardi، نويسنده , , Northeastern University ، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2008
  • Pages
    9
  • From page
    178
  • To page
    186
  • Abstract
    This efficient approximation model for the drain-source current in a CNFET is analytic, its execution is fast, and it is suitable for simulating circuits consisting of many CNFET devices in a CAD environment. Evaluation results show that the model encounters a very modest normalized RMS error for diameter, Fermi level, and bias variations, while significantly improving simulation performance.
  • Journal title
    IEEE Design and Test of Computers
  • Serial Year
    2008
  • Journal title
    IEEE Design and Test of Computers
  • Record number

    431820

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=431820