Title of article :
Effect of lanthanum dopant on the structural and electrical properties of LiCoVO4 cathode materials investigated by EXAFS
Author/Authors :
B. J. Hwang، نويسنده , , Y. W. Tsai، نويسنده , , G. T. K. Fey، نويسنده , , J. F. Lee and L. Y. Jang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Pages :
4
From page :
551
To page :
554
Abstract :
The effect of lanthanum dopant on the structural and electrical properties of LiCoVO4 cathode materials was investigated by X-ray absorption spectroscopy (XAS). The conductivity of LiCoVO4 was increased from 8.44×10−9 to 7.17×10−8 S/cm by doping proper amounts of La2O3. The doping of La results in slightly decreasing the oxidation states of Co and V and the intensity of Fourier transform (FT) around absorbing atom Co and V. It may result from the distortion of the inverse spinel structure of LiCoVO4. It was suggested that La dopant located in interstitial site near vanadium atom to make the tetragonal distortion. This distortion is contributed to the generation of the defects in the doped LiCoO4 and the enhancement of its conductivity.
Keywords :
LiCoVO4 , Conductivity , La-doped , XAFS
Journal title :
Journal of Power Sources
Serial Year :
2001
Journal title :
Journal of Power Sources
Record number :
440651
Link To Document :
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