Title of article
Analysis of vertical cracking phenomena in tensile-strained epitaxial film on a substrate: Part I. Mathematical formulation
Author/Authors
S. Lee، نويسنده , , S.T. Choi، نويسنده , , Y.Y. Earmme، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
13
From page
3401
To page
3413
Abstract
This paper presents an analysis of a single vertical crack and periodically distributed vertical cracks in an epitaxial
film on a semi-infinite substrate where the cracks penetrate into the substrate. The film and substrate materials have
different anisotropic elastic constants, necessitating Stroh formalism in the analysis. The misfit strain due to the lattice
mismatch between the film and the substrate serves as the driving force for crack formation. The solution for a dislocation
in an anisotropic trimaterial is used as a Green function, so that the cracks are modeled as the continuous distributions
of dislocations to yield the singular integral equations of Cauchy-type. The Gauss–Chebyshev quadrature
formula is adopted to solve the singular integral equations numerically. Energy arguments provide the critical condition
for crack formation, at which the cracks are energetically favorable configurations, in terms of the ratio of the penetration
depth into the substrate to the film thickness, the ratio of the spacing of the periodic cracks to the film thickness,
and the generalized Dundurs parameters between the film and substrate materials
Keywords
Anisotropic elasticity , Channeling crack , Vertical crack , Critical condition for crack formation , Continuous distributionsof dislocations , Epitaxial film/substrate system
Journal title
International Journal of Solids and Structures
Serial Year
2006
Journal title
International Journal of Solids and Structures
Record number
448546
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