Title of article
Delamination in patterned films
Author/Authors
X.H. Liu، نويسنده , , M.W. Lane، نويسنده , , T.M. Shaw، نويسنده , , E. Simonyi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
13
From page
1706
To page
1718
Abstract
When the dielectric constant of an insulator in an interconnect is reduced, mechanical properties are often compromised,
giving rise to significant challenges in interconnect integration and reliability. Due to low adhesion of the dielectric
an interfacial crack may occur during fabrication and testing. To understand the effect of interconnect structure, an interfacial
fracture mechanics model has been analyzed for patterned films undergoing a typical thermal excursion during the
integration process. It is found that the underlayer pattern generates a driving force for delamination and changes the
mode mixity of the delamination. The implications of our findings to interconnect processes and reliability testing have
been discussed.
Keywords
thermal stress , Finite element analysis , Interfacial fracture mechanics , Interfacial crack , Delamination , Interconnect structures
Journal title
International Journal of Solids and Structures
Serial Year
2007
Journal title
International Journal of Solids and Structures
Record number
448991
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