Effect of geometry upon the performance of a thin film ferroelectric capacitor

The finite element method is used to investigate the performance of a ferroelectric random access memory as a function of its geometry. Performance is characterised by the charge versus electric field relation, and the sensitivity of performance to geometry is explored. The primary geometric variables are the dimensions of a prismatic two-dimensional (2D) island of ferroelectric material, and the edge inclination angle caused by the etching process along the sides of the island. The performance of the two-dimensional ferroelectric device is compared to those of an unsupported ferroelectric thin film and of a ferroelectric film bonded to a substrate.