Author/Authors :
Torres، Carlos F. نويسنده , , K.Hisatake، نويسنده , , I.Matsubara، نويسنده , , K.Maeda، نويسنده , , T.Fujiwara، نويسنده , , S.Abe، نويسنده , , S.Kainuma، نويسنده , , Francisco، Carlos de نويسنده , , Munoz، Jose Maria نويسنده , , Alejos، Oscar نويسنده , , Hernandez، Pablo نويسنده ,
Abstract :
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82 Ge0.18 layer is deposited at 550°C. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.
Keywords :
CAPP , Injection mould , Slider , feature
