Title of article :
Hot-electron transport processes in ballistic-electron emission microscopy at Au-Si interfaces
Author/Authors :
D?hne-Prietsch، M. نويسنده , , Kalka، T. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
-210
From page :
211
To page :
0
Abstract :
We present an overview of the experimental method and physical principles of scanning tunneling microscope (STM) light emission spectroscopy (STM-LES). By this new spectroscopic technique one can obtain the optical emission spectra of specific and individual surface nanostructures that are imaged by the STM. This method has been used to investigate the electronic transitions in surface nanostructures such as the protrusions of porous Si, the quantum wells of a semiconductor, and the rows and valleys of the reconstructed Au(110) surface.
Keywords :
Ballistic-electron emission microscopy , Hot-electron transport , Interface transmission , Scattering processes
Journal title :
JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA
Serial Year :
2000
Journal title :
JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA
Record number :
48337
Link To Document :
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