Title of article :
Thermodynamic modeling of the V–Si system supported by key experiments
Author/Authors :
Chao Zhang، نويسنده , , Yong Du، نويسنده , , Wei Xiong، نويسنده , , Honghui Xu، نويسنده , , Philip Nash، نويسنده , , Yifang Ouyang، نويسنده , , Rongxiang Hu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2008
Pages :
6
From page :
320
To page :
325
Abstract :
The V–Si system is reassessed based on a critical literature review involving recently reported data and the present experimental data. These new data include the thermodynamic stability of V 6Si5 and the enthalpies of formation for the compounds calculated by first-principles method. Two alloys were prepared in the region of (Si)+V Si2 and annealed at 1273 K for 14 days. After X-ray diffraction (XRD) and chemical analysis of these alloys were performed, the eutectic reaction (Lleft right double arrow(Si)+V Si2) temperature was determined by differential thermal analysis (DTA). Self-consistent thermodynamic parameters for the V–Si system were obtained by optimization of the selected experimental values. The calculated phase diagram and thermodynamic properties agree well with the experimental ones. Noticeable improvements have been made, compared with the previous assessments.
Keywords :
Differential thermal analysis , V–Si phase diagram , Thermodynamic calculation , X-ray diffraction
Journal title :
C A L P H A D (Computer Coupling of Phase Diagrams and Thermochemistry)
Serial Year :
2008
Journal title :
C A L P H A D (Computer Coupling of Phase Diagrams and Thermochemistry)
Record number :
515454
Link To Document :
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