A note on collected-charge fluctuations in silicon surface-barrier detectors at heavy ion registration

Experimental results on charge losses and resolution in surface-barrier detectors under irradiation by 136Xe ions with an energy of about 1 MeV/amu are presented. It is shown that the dependence of resolution on charge losses and on the electric field intensity changes slope in a weak electric field region. It is supposed that this effect implies a mechanism of averaging charge losses due to the radial extension of a plasma column by the ambipolar diffusion.