Evaluation of high density DRAMs as a nuclear radiation detector

The research is based on the nuclear radiation induced soft error phenomenon associated with dynamic random access memory devices (DRAMs). Samples of 256 kbit and 1 Mbit decapped DRAMs from several manufacturers were exposed to standard alpha sources and showed a linear response with an intrinsic detection efficiency approaching 10%. Sensitivity studies were performed to evaluate the effects of DRAM operating voltage, refresh frequency and the data pattern stored prior to irradation. The associated mechanism of soft error phenomenon is discussed. Samples were also exposed to gamma rays up to 105 rad to examine the total dose effect. The annealing phenomenon after gamma exposure is also presented.