Electrochemical preparation of ZnS/CdS superlattice and its photoelectrochemical properties

Superlattice electrodes composed of three molecular layers of CdS and one to three molecular layers of ZnS were prepared on gold (111) film by using electrochemical atomic layer epitaxy. The prepared electrodes exhibited similar behavior to those of ntype semiconductor electrodes. The energy gap was not changed at all by changing the number of molecular layers of ZnS and by increasing the number of periods in the superlattice structure up to four. The magnitude of the anodic photocurrent was, however, influenced by these variables. It increased with an increase in the number of periods in the superlattice structure and decreased with increasing number of molecular layers of ZnS.