Title of article :
Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs|GaAs/Al0.3Ga0.7As multiple quantum well electrode
Author/Authors :
Liu، Yao نويسنده , , Xiao، Xu-Rui نويسنده , , Zeng، Yi-Ping نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
-403
From page :
404
To page :
0
Abstract :
novel composite InxGa1-xAs/GaAs|GaAs/AlxGa1-xAs multiple quantum well aterial with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. The photocurrent spectrum and photocurrent¯electrode potential curve were measured in ferrocene nonaqueous solution. Pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. The effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed.
Keywords :
Bismuth electrode , Adsorptive stripping voltammetry , nickel , Dimethylglyoxime
Journal title :
ELECTROCHEMISTRY COMMUNICATIONS
Serial Year :
2000
Journal title :
ELECTROCHEMISTRY COMMUNICATIONS
Record number :
54833
Link To Document :
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