Title of article :
Transport Phenomena of YB41Si1.2
Author/Authors :
Tanaka، Takaho نويسنده , , Ishizawa، Yoshio نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
-228
From page :
229
To page :
0
Abstract :
YB41Si1.2 was grown by a floating zone method with infrared heating. The crystal structure of YB41Si1.2 belongs to the orthorhombic system. The electrical resistivity, the Hall coefficient, and the Seebeck coefficient have been investigated from liquid nitrogen temperature to room temperature. The temperature dependence of the electrical resistivity was expressed as exp [(T0/T)1/4] and indicates semiconductive nature. The Hall mobility was estimated to an order of 0.1 cm2/V s or lower. The combined data of the Hall mobility and the electrical resistivity indicates that electrical conduction is not of the band conduction type but of hopping type. The Seebeck coefficient is almost temperature independent between 110 and 290 K with a value of about 180 muV/K. For temperatures lower than 110 K, the Seebeck coefficient decreases rapidly with decreasing temperature. The figure of merit of the thermoelectric conversion of YB41Si1.2 was estimated and discussed using present data.
Keywords :
hot compacting , explosive compression , Boron carbide , boron , sintering
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
2000
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Record number :
56515
Link To Document :
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