Title of article :
Giant Negative Magnetoresistance in GdI2: Prediction and Realization
Author/Authors :
SIMON، A. نويسنده , , KREMER، R. K. نويسنده , , Felser، C. نويسنده , , Ahn، K. نويسنده , , Seshadri، R. نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
-18
From page :
19
To page :
0
Abstract :
The electronic structure of the layered d1 compound GdI2 has been examined systematically in view of its relation to other layered d1 systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface. The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5) K and displays large negative magnetoresistance ~70% at 7 T close to room temperature. This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculations.
Keywords :
hydrothermal methods , open-framework materials , zinc phosphates
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
1999
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Record number :
56895
Link To Document :
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