X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions

An analysis of X-ray rocking curves and reciprocal space maps recorded for silicon single crystals before and after implantation with a 5×1014-cm-2 dose of 3 MeV/n nitrogen ions is presented. Silicon single crystals of orientation (100) were obtained by the Czochralski method. X-ray investigations were performed by means of a high-resolution Philips diffractometer using the characteristic CuK-1 radiation, and the integral reflectivities were measured with a double crystal diffractometer using the characteristic AgK-1 radiation. It was stated that irradiation with fast nitrogen ions can create extended defects as well as formation of nano-areas of disordered structure in the silicon crystal. An increase in the surface roughness was also determined from the grazing incidence X-ray reflectivity measurements.