Title of article :
Effect of a current-sensing resistor on required MOSFET size
Author/Authors :
B.، Bryant, نويسنده , , M.K.، Kazimierczuk, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-707
From page :
708
To page :
0
Abstract :
The effect of a current-sensing resistor used in current-mode control of pulsewidth modulator (PWM) converters on required MOSFET aspect ratio, the ratio of channel width to channel length generally known as W/L, is studied. The results can also be applied to the effect of source parasitic resistance in a power MOSFET. These resistances require a significant increase in aspect ratio to achieve a desired maximum current capability. Experimental results are presented verifying the validity of the theoretical results.
Keywords :
Structures , Privatization , Property rights
Journal title :
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS
Serial Year :
2003
Journal title :
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS
Record number :
61159
Link To Document :
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