Title of article :
A 10-Gb/s CMOS clock and data recovery circuit with a half-rate binary phase/frequency detector
Author/Authors :
J.، Savoj, نويسنده , , B.، Razavi, نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
-12
From page :
13
To page :
0
Abstract :
A 10-Gb/s phase-locked clock and data recovery circuit incorporates a multiphase LC oscillator and a half-rate phase/frequency detector with automatic data retiming. Fabricated in 0.18-/spl mu/m CMOS technology in an area of 1.75/spl times/1.55 mm/sup 2/, the circuit exhibits a capture range of 1.43 GHz, an rms jitter of 0.8 ps, a peakto-peak jitter of 9.9 ps, and a bit error rate of 10/sup -9/ with a pseudorandom bit sequence of 2/sup 23/-1. The power dissipation excluding the output buffers is 91 mW from a 1.8-V supply.
Keywords :
Oriented martensite , Self-accommodating martensite , TiNi film , transformation
Journal title :
IEEE Journal of Solid- State Circuits
Serial Year :
2003
Journal title :
IEEE Journal of Solid- State Circuits
Record number :
62835
Link To Document :
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